Ultrathin ZrO2 films on Si-rich SiC(0001)-(3x3): Growth and thermal stability
The growth and thermal stability of ultrathin ZrO2 films on the Si-rich Si(0001)-(3 x 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 degrees C yields tetragonal ZrO2. An interfa
