Simulating Scaling Effects in Fully Vertical GaN FinFETs
Herein, it is shown that a fully vertical GaN FinFET can reach close to ideal Baliga's figure of merit (BFOM) for thicker drift layers. Devices with drift layers between 1 and 8 (Formula presented.) are simulated using TCAD, and the device geometry is varied to find optimal device performance. For 8 (Formula presented.) drift layers, device operation at the BFOM limit is found with (Formula presen
