Neuromorphic Photoresponse in Ultrathin SnS2-Based Field Effect Transistor
As artificial intelligence continues to evolve, neuromorphic technologies, which emulate biological neural networks, are increasingly seen as a promising direction. Two-dimensional materials are considered promising for neuromorphic applications due to their tunable electrical and optoelectronic properties. In this work, a back-gated tin disulfide (SnS2) field-effect transistor (FET) is electrical
