Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents
We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. B