Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues
We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO2 surfaces after electron beam exposure and resist development. The attenuation of the SiO2 valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found
