Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread
We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition