Electronic structure of nanometer-scale semiconductor wires
We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, i