Performance Evaluation of III–V Nanowire Transistors
III–V nanowire (NW) transistors are an emerging technology with the prospect of high performance and low power dissipation. Performance evaluations of these devices, however, have focused mostly on the intrinsic properties of the NW, excluding any parasitic elements. In this paper, a III–V NW transistor architecture is investigated, based on a NW array with a realistic footprint. Based on scaling