Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
Electrically active defects induced by electron irradiation in Czochralski (Cz)grown Si crystals with low carbon content (N-C <= 2 x 10(15) cm(-3)) have been studied by means of Hall effect measurements, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS). It has been found that in n-type carbon-lean Cz-Si irradiated at room temperature a centre with an acceptor level
