RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at