Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control
