New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography
We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and d
