Atomic scale modication of semiconductor nanostructure surfaces
The III-V semiconducting compounds InAs and GaSb were studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Different crystal planes of each material were investigated separately, including wafers of InAs(111)A, InAs(111)B, InAs(110), GaSb(100), GaSb(110) as well as nanowires consisting of InAs. All these materials were imaged both before and after exposure
