Electron Assisted Growth of h-BN on Gr/Ir(111)
Stacked heterostructures of two-dimensional (2D) materials are emerging as promising building blocks for a wide range of applications. These devices, which range from tunneling transistors to light-emitting diodes, use the properties of 2D materials that are not accessible by their bulk counterparts. However, with the current growth techniques, a scalable mass production of high-quality 2D heteros
