Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition