Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
Tunnel Field Effect Transistor (TFET), based on band-to-band tunneling, overcomes the thermal limit (subthreshold slope (S) > 60 mV/decade) of the MOSFETs by filtering the high-energy Fermi tail, thereby allowing a substantial reduction of supply voltage and power consumption. Despite the steep slope behavior, TFETs can suffer from ambipolarity wherein carriers tunnel into the channel at both high