Properties of III-V nanowires : MOSFETs and TunnelFETs
This paper describes the properties and performance status of vertical III-V nanowire transistors. The development of key process modules has advanced the vertical fabrication technology and competitive device performance is reported for InAs MOSFETs and TunnelFETs. Besides the benefits in electrostatic control and the ease in integration on Si substrates, the vertical transistors offers a path to