Single InAs/GaSb Nanowire Low-Power CMOS Inverter
III − V semiconductors have so far predom- inately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III − V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal − oxide − semiconducto
