Strategy for Neutralizing the Impact of Insertion Devices on the MAX IV 3 GeV Storage Ring
In order to prepare for the potentially negative influence of insertion devices (IDs) on beam lifetime, injection effi- ciency and beam size in the MAX IV 3 GeV storage ring, a strategy for neutralizing the foreseen effects of the IDs has been developed. The strategy involves a local correction of the betatron phase advance by adjusting the strength of the quadrupoles adjacent to the ID as well as
