Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
The nonvolatile cryogenic memories can play an important role in realizing energy-efficient and scalable low-temperature electronics for quantum computing and future high-performance computing systems. In this article, we evaluate he cryogenic performance of HfOx-based resistive random access memory (RRAM) and demonstrate that the addition of extremely thin ∼0.5-nm AlOx barrier layers enables a h
