Theoretical study of electronic structure of silicon nanocrystals
We report on a theoretical study of the electronic structure of silicon nanocrystals with a shape of the regular rhombic dodecahedron, based on a tight-binding method. The energies of the lowest unoccupied state and the highest occupied state have been calculated. We have shown that the six-fold degenerate conduction band minima of the bulk silicon crystal are split into a non-degenerate A(1) stat