In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires
Vapor–solid–solid (VSS) growth of III-V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep-level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS grow