Etching of zinc blende InAs nanowires for quantum dot studies
We explored various methods for inducing quantum dots (QDs) in pure zinc blende (ZB) InAs nanowires. This material exhibits high conductivity due to the presence of an intrinsic accumulation layer of charge carriers, resulting from surface band bending and donor impurities. To create regions that can be depleted by gate potentials (barriers) in the axial direction of the nanowire, we employed both
