Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices
III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. Even though the possibility of the fabrication of many devices bas
