Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs
The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells(QWs) is investigated. Three sets of high-mobility InGaAs QW structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these s