Growth and structural characterization of GaP-GaPSb nanowires
In this thesis epitaxial growth of Ga(P1-xSbx) and analysis by electron microscopy are presented. To the authors knowledge Ga(P1-xSbx)has not been grown in the form of nanowires before and the main motivation of this work is to investigate the possibility of overcoming the miscibility gap (1-99%) in nanostructures. The goal of this project is to gain a better understanding of the general behavior
