VOn (n >= 3) defects in irradiated and heat-treated silicon
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700 degrees C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm(-1) to the VO3 complex are obtained. In particular, a correlated gener
