Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
This paper reports the latest improvements performed on structural characterization by high resolution x-ray diffraction (XRD) on InGaAlAs-based multiple quantum well (MQW) structures on InP substrates, produced by metal organic vapor phase epitaxy in the regime of selective area growth (SAG). A new diffractometer, with a sub-millimeter x-ray spot, was used in the laboratory to study the MQW prope