Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact
Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plan
