N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC : Effects of substrate orientation on the polarity, surface morphology and crystal quality
Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures, but has not yet been explored for N-polar growth. In this work, we aim at achieving N-polar AlN nucleation layers (NLs) with optimized properties for subsequent growth of GaN device heterostructures. The effects of substrate orientation on the
