Atomic Layer Deposition Parameter Optimization
Al2O3 and SiO2 films were synthesized using Atomic Layer Deposition (ALD) at low temperature of 250 °C. Thermal ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and H2O as precursors and plasma ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and O2 plasma as precursor and oxidant, respectively. To grow SiO2 films Bis (diethylamido) silane as Si precursor and O2 plasma as oxidant were used