Developing an Ar milling process to improve the contact quality to InAs nanowires
The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). After further experiments with different milling parameters, a set of parameter values was foun
