Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable s
