Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges f
