Correlated Structure-Property Investigation of Ultrathin InAs Nanowires
III-V semiconductors are a profound part of the optoelectronics industry and new developments in alloy compositions and architectures are constantly emerging. Lowdimensional semiconductors, such as nanowires (NWs) have shown to have improved characteristics in certain areas such as enhanced light absorption and can furthermore be integrated on Silicon (Si) plattforms and are thus predicted to be a