Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films
Mn-doped AlN films were prepared by magnetron reactive sputtering system. The preparation conditions were optimized to give pure single-phase AlMnN films. The films were deposited on quartz substrates. The single-phase films were obtained in argon-nitrogen pressure of 6 mTorr and a substrate temperature of 300 °C. The films typically had a thickness of 0.4 μm. The XRD pattern indicated a pure AlM
