Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
Electrically active defects induced by electron irradiation in Czochralski (Cz)grown Si crystals with low carbon content (N-C 10(16) cm(-3). The E-0.11 trap anneals out in the temperature range 100-130 degrees C with the activation energy 1.35 eV. In p-type Cz-Si crystals with low carbon content and boron (NB 2 x 10(14) cm(-3)) one of the dominant radiation-induced defects has been found to be a