Threshold stoichiometry for beam induced nitrogen depletion of SiN
Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable agains