Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes
Here we demonstrate the existence of two distinct regimes for tuning crystal structure in GaAs nanowires from zinc blende to wurtzite using a single process parameter: V/III-ratio, or variation of the group V precursor flow. Extensive previous studies have shown that crystal structure is sensitive to V/III-ratio, and even that it is possible to change structure entirely using this single parameter
