Development of Ni-based Ohmic contacts to InAs and InGaAs
Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealin