Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail t
