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A 0.8V, 7uA, rail-to-rail input/output, constant Gm operational amplifier in standard digital 0.18um CMOS

A two-stage amplifier, operational at 0.8V and drawing 7/spl mu/A, has been integrated in a standard digital 0.18/spl mu/m CMOS process. Rail-to-rail operations at the input are enabled by complementary transistor pairs with g/sub m/ control. The efficient rail-to-rail output stage is biased in class AB. The measured DC gain of the amplifier is 75dB, and the unity-gain frequency is 870kHz with a 1

Receivers of (dis)trust: Administrators in bankruptcy

Analyses of economic actions often proceed from a consideration of how trust serves as a basis for the interaction of economic agents. A bankruptcy entails a breach of the relations of trust in an economic network. Receivers are the lawyers appointed by Swedish courts to investigate and ultimately resolve bankrupts disputes. The article demonstrates how the manner in which receivers characterise t

Pituitary adenylate cyclase activating peptide: a neuropeptide in the sensory nervous system.

This thesis deals with the expression of pituitary adenylate cyclase activating peptide (PACAP) in sensory C-type cells and primary afferent fibres and its possible role in nociceptive transmission. PACAP-expression, -release, -synthesis and -function were investigated in a series of measurements using immunocytochemistry, radioimmunoassay, in situ hybridization histochemistry, Northern blot, elec

Union density and specialist/professional unions in Sweden

This paper deals with the considerable membership shifts between the Swedish union confederations LO (blue-collar), TCO (white-collar) and Saco (white-collar), but above all it is about the rising share of union members in occupational/professional unions in the last few decades. This development corresponds to Saco's increased share of union members (8 per cent in 1990, 15 per cent in 2008). Also

Surface diffusion effects on growth of nanowires by chemical beam epitaxy

Surface processes play a large role in the growth of semiconductor nanowires by chemical beam epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to understand in order to control the nanowire growth. In this paper, we have grown InAs-based nanowires positioned by electron beam lithography and have investigated the dependence of the diffusion of In s