Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(100) and Si(111) studied by electron spectroscopy
The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whe