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The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 c
