Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom C-i, occurring in the temperature interval 260-300 K, results in a gradual appear
