Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs). Drain-induced barrier lowering (DIBL) is commonly used for quantifying the ability of the gate to modulate the drain–source current at high drain voltages. DIBL is traditionally extracted from the relative shift o
