Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. However, with continued device scaling, the performance of Integrated Chips (ICs) starts to deteriorate, making it essentia