A Low-Voltage 6T Dual-Port Configured SRAM with Wordline Boost in 28 nm FD-SOI
A 32 Kb dual-port low-voltage SRAM in 28 nm FD-SOI, featuring foundry supplied high-density 6T bitcells, is presented. Dual-port configurability is realized by a unique dual-rail architecture, utilizing boost techniques that guarantee reliable operation in low-voltage. The area cost of the array is 62% lower, compared to widely used 8T two-port or dual-port SRAM arrays. The SRAM reliably operates
