Oxidation and reduction behavior of Ge/Si islands
We have investigated the oxidation/reduction behavior of dome-shaped three-dimensional islands of Ge on Si(001) grown by ultrabigh vacuum chemical vapor deposition. The oxidation was done by exposing the surfaces to H2O steam in N-2. The reduction was done by H-2, which selectively reduces only the GeO2. The results of the oxidation/reduction processes under varying conditions were analyzed by hig
