Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies
The metalorganic chemical vapor deposition (MOCVD) dynamics of beta-gallium oxide (β-Ga2O3) growth using trimethylgallium (TMGa) and oxygen as precursors were investigated through both theoretical thermodynamic analysis and experimental validation in a horizontal low-pressure hot-wall reactor. Thermodynamic analysis revealed that high-purity β-Ga2O3 can be grown through the complete combustion of
